Bipolar magnetic semiconducting behavior in VNbRuAl

We report the theoretical prediction of a class spintronic materials, namely, bipolar magnetic semiconductors (BMSs), also supported by our experimental data. BMSs possess unique band structure with unequal gaps for spin-up and spin-down channels thus are useful tunable spin-transport-based applications such as spin filters. The valence conduction in approach Fermi level through opposite hence facilitate reversible polarization that is controllable via applied gate voltage. quaternary Heusler alloy VNbRuAl to exactly BMS. A rigorous normal x-ray diffraction (XRD) fitting along synchrotron XRD data confirms this crystallizes LiMgPdSn partial $\mathrm{B}2$ disorder. Transport measurements show two-channel semiconducting behavior quasilinear dependence negative magnetoresistance, indicating possible nature. thermoelectric power not only confirm nature but give strong indication BMS Interestingly, appears features fully compensated ferrimagnetic (FCF) vanishing magnetization significantly high ordering temperature ($>900 \mathrm{K}$). Theoretical simulations special quasirandom predict B2 disorder be mainly responsible coexistent FCF-like behavior. This study opens up possibility finding another materials antiferromagnetic spintronics, great significance both fundamental fronts.